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吸收电容与IGBT/GTO在电路中并联使用,避免因电压突变对IGBT/GTO造成损伤。
应用场合 - Snubber, pulse, resonant circuits - SCR commutating circuit - High frequency, high voltage 特点 - 0.001μF ~ 4.7μF - 630Vdc ~ 2000Vdc - 温度: -40°C ~ +105°C - High frequency, low losses - Double sided metallization |
应用场合 - Snubber, pulse, resonant circuits - SCR commutating circuit - High frequency, high voltage 特点 - 0.001μF ~ 4.7μF - 630Vdc ~ 2000Vdc - 温度: -40°C ~ +105°C - High frequency, low losses - Double sided metallization - 双 85 1000小时 |
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应用场合 - Snubber, pulse, resonant circuits - SCR commutating circuit - High frequency, high voltage 特点 - 0.001μF ~ 4.7μF - 630Vdc ~ 2000Vdc - 温度: -55°C ~ +105°C - High frequency, low losses - Double sided metallization - AEC-Q200, 双85 2000小时 |
应用场合 - Snubber, pulse, resonant circuits - SCR commutating circuit - High frequency, high voltage 特点 - 0.001μF ~ 4.7μF - 630Vdc ~ 2000Vdc - 温度: -55°C ~ +125°C - High frequency, low losses - Double sided metallization - AEC-Q200, 双85 2000小时 |
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应用场合 - IGBT module protection - High voltage, high frequency - High current 特点 - 0.033μF ~ 4.0μF - 850Vdc ~ 2000Vdc - High frequency, low losses - Double sided metallization - High contact reliability |
应用场合 - IGBT module protection - High frequency, high voltage 特点 - 0.01μF ~ 4.7μF - 600Vdc ~ 3000Vdc - High frequency, low losses - Double sided metallization |
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应用场合 - IGBT module protection - High frequency, high voltage 特点 - 0.047μF ~ 4.7μF - 850Vdc ~ 2000Vdc - High frequency, low losses - Double sided metallization |
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